Method for measuring absorbed energy density in photoresist in a laser pattern generation

Sergey V. Babin

doi:10.1117/12.240957

7 June 1996 Method for measuring absorbed energy density in photoresist in a laser pattern generation

Sergey V. Babin

Proceedings Volume 2726, Optical Microlithography IX; (1996) https://doi.org/10.1117/12.240957
Event: SPIE's 1996 International Symposium on Microlithography, 1996, Santa Clara, CA, United States

Abstract

The possibility of increasing the resolution and accuracy of the photomask fabrication process is discussed when using a laser pattern generator. The proximity effect is first taken into account in this technique. The redistribution of laser beam energy in photoresist, which results in pattern distortions, can be characterized and used for the distortion compensation. The method for measuring absorbed energy density in photoresist is proposed, and experimental results are obtained for conditions used for a standard-type of photomask manufacturing process.

Citation Download Citation

Sergey V. Babin "Method for measuring absorbed energy density in photoresist in a laser pattern generation", Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); https://doi.org/10.1117/12.240957

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