Lithography model tuning: matching simulation to experiment

Stephen H. Thornton; Chris A. Mack

doi:10.1117/12.240908

7 June 1996 Lithography model tuning: matching simulation to experiment

Stephen H. Thornton, Chris A. Mack

Proceedings Volume 2726, Optical Microlithography IX; (1996) https://doi.org/10.1117/12.240908
Event: SPIE's 1996 International Symposium on Microlithography, 1996, Santa Clara, CA, United States

Abstract

A method is presented for adjusting the input parameters of a lithography simulator to more accurately match a given set of experimental conditions. Using a dose-to-clear swing curve on bare silicon, the index of refraction of the photoresist is adjusted to account for relative resist thickness measurements made in the fab. The resist exposure rate constant C can be adjusted to account for dose calibration differences, or these differences could be included in the development parameters. The develop parameters can be tuned using the exposure margin, or a measurement technique called the Poor Man's DRM could be used to measure a new set of development parameters. Results of these tuning procedures are presented and the tuned set of parameters is shown to give good quantitative agreement of simulation to experiment.

Citation Download Citation

Stephen H. Thornton and Chris A. Mack "Lithography model tuning: matching simulation to experiment", Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); https://doi.org/10.1117/12.240908

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