Stable process for chemically amplified resists using a new adhesion promotor

Masayuki Endo; Satoko Kawasaki; Akiko Katsuyama

doi:10.1117/12.241813

14 June 1996 Stable process for chemically amplified resists using a new adhesion promotor

Masayuki Endo, Satoko Kawasaki, Akiko Katsuyama

Proceedings Volume 2724, Advances in Resist Technology and Processing XIII; (1996) https://doi.org/10.1117/12.241813
Event: SPIE's 1996 International Symposium on Microlithography, 1996, Santa Clara, CA, United States

Abstract

We have developed a stable process for chemically amplified resists against the airborne contamination using a new adhesion promoter. The new adhesion promoter does not produce ammonia when it decomposes and its trimethylsilyl group adheres to a substrate. We have applied this new adhesion promoter to KrF excimer laser lithography. The excellent 0.30 micrometer pattern profiles were achieved without skin-layer or T-top profiles after leaving the exposed wafer in the atmosphere of the new adhesion promoter for 15 minutes before PEB. We also found that the adhesion strength of the new adhesion promoter to a substrate is as good as the conventional adhesion promotor and obtained large depth of focus latitude using the new adhesion promoter.

Citation Download Citation

Masayuki Endo, Satoko Kawasaki, and Akiko Katsuyama "Stable process for chemically amplified resists using a new adhesion promotor", Proc. SPIE 2724, Advances in Resist Technology and Processing XIII, (14 June 1996); https://doi.org/10.1117/12.241813

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