Gallium Arsenide Monolithic Optoelectronic Circuits

N. Bar-Chaim; J. Katz; S. Margalit; I. Ury; D. Wilt; A. Yariv

doi:10.1117/12.965697

28 July 1981 Gallium Arsenide Monolithic Optoelectronic Circuits

N. Bar-Chaim, J. Katz, S. Margalit, I. Ury, D. Wilt, A. Yariv

Proceedings Volume 0272, High Speed Photodetectors; (1981) https://doi.org/10.1117/12.965697
Event: 1981 Los Angeles Technical Symposium, 1980, Los Angeles, United States

Abstract

The optical properties of GaAs make it a very useful material for the fabrication of optical emitters and detectors. GaAs also possesses electronic properties which allow the fabrication of high speed electronic devices which are superior to conventional silicon devices. Monolithic optoelectronic circuits are formed by the integration of optical and electronic devices on a single GaAs substrate. Integration of many devices is most easily accomplished on a semi-insulating (SI) sub-strate. Several laser structures have been fabricated on SI GaAs substrates. Some of these lasers have been integrated with Gunn diodes and with metal semiconductor field effect transistors (MESFETs). An integrated optical repeater has been demonstrated in which MESFETs are used for optical detection and electronic amplification, and a laser is used to regenerate the optical signal. Monolithic optoelectronic circuits have also been constructed on conducting substrates. A heterojunction bipolar transistor driver has been integrated with a laser on an n-type GaAs substrate.

Citation Download Citation

N. Bar-Chaim, J. Katz, S. Margalit, I. Ury, D. Wilt, and A. Yariv "Gallium Arsenide Monolithic Optoelectronic Circuits", Proc. SPIE 0272, High Speed Photodetectors, (28 July 1981); https://doi.org/10.1117/12.965697

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KEYWORDS

Gallium arsenide

Optoelectronics

Transistors

Field effect transistors

Semiconductor lasers

Heterojunctions

Laser damage threshold

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