Photoresist-free microstructuring of III-V semiconductors with laser-assisted dry-etching ablation

Jan J. Dubowski; M. Bielawski; B. Mason

doi:10.1117/12.237752

8 April 1996 Photoresist-free microstructuring of III-V semiconductors with laser-assisted dry-etching ablation

Jan J. Dubowski, M. Bielawski, B. Mason

Proceedings Volume 2703, Lasers as Tools for Manufacturing of Durable Goods and Microelectronics; (1996) https://doi.org/10.1117/12.237752
Event: Photonics West '96, 1996, San Jose, CA, United States

Abstract

The progress in manufacturing of integrated microelectronic and optoelectronic devices requires new technologies which would make possible printing of nanometer-size features and/or which would offer cost effective solutions in the fabrication of micrometer-size devices. Laser-induced direct (photoresist-free) patterning of materials has been recently investigated as a method that has some potential in that area. We have applied laser-assisted dry etching ablation for contact, proximity and projection mask lithography of III-V semiconductor films, quantum wells and superlattices. It has been shown that micrometer-size structures of those materials can be directly fabricated following the exposure to an excimer laser radiation in an atmosphere of chlorine diluted in helium. The results indicate that the process has the potential for the fabrication of high-quality quantum wire and quantum dot structures.

Citation Download Citation

Jan J. Dubowski, M. Bielawski, and B. Mason "Photoresist-free microstructuring of III-V semiconductors with laser-assisted dry-etching ablation", Proc. SPIE 2703, Lasers as Tools for Manufacturing of Durable Goods and Microelectronics, (8 April 1996); https://doi.org/10.1117/12.237752

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