Laser-induced surface doping of semiconductors

Koji Sugioka; Koichi Toyoda; Masayuki Jyumonji; Hiroshi Takai

doi:10.1117/12.237742

8 April 1996 Laser-induced surface doping of semiconductors

Koji Sugioka, Koichi Toyoda, Masayuki Jyumonji, Hiroshi Takai

Proceedings Volume 2703, Lasers as Tools for Manufacturing of Durable Goods and Microelectronics; (1996) https://doi.org/10.1117/12.237742
Event: Photonics West '96, 1996, San Jose, CA, United States

Abstract

Formation of shallow junction with extremely high carrier concentration is presented by KrF excimer laser doping of GaAs using an ambient SiH₄ gas. The generation mechanism and thermal stability of the high carrier concentration in GaAs formed by the laser doping are also investigated. In addition, submicron patterned doping of Si into GaAs is demonstrated using a projection system. The projection-patterned doping is applied to self-aligned microfabrication of nonalloyed ohmic contacts with a low contact resistance with combination of a following plating process. Furthermore, junction deeper than 1 micrometers is formed by laser-driven diffusion of As⁺-implanted Si. The double-pulse irradiation method using two KrF excimer lasers drastically improves surface morphology and crystalline quality of the deep junction.

Citation Download Citation

Koji Sugioka, Koichi Toyoda, Masayuki Jyumonji, and Hiroshi Takai "Laser-induced surface doping of semiconductors", Proc. SPIE 2703, Lasers as Tools for Manufacturing of Durable Goods and Microelectronics, (8 April 1996); https://doi.org/10.1117/12.237742

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