Paper
5 July 1996 Stress relaxation and critical layer thickness of high-temperature superconductor thin films, heterostructures, and superlattices
Jean-Pierre Contour, A. Abert, Arnaud Defossez
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Abstract
The heteroepitaxial growth of high temperature superconductor thin films on single crystal substrates produces strained heterostructures when the mismatch is small and the thickness of the epilayer is not large. ALthough a large number of studies have been carried out in the case of semiconductor epitaxy, only a few papers report models or experimental results dealing with the relaxation of the elastic strain in cuprate heterostructures. We apply here the calculations performed for semiconductor epitaxial layers and pseudomorphic superlattices to estimate the critical layer thickness of cuprate thin films, heterostructures and superlattices. The result of these calculations is discussed with respect to the previously reported data and also to our results in the case of YBaCuO heterostructures.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jean-Pierre Contour, A. Abert, and Arnaud Defossez "Stress relaxation and critical layer thickness of high-temperature superconductor thin films, heterostructures, and superlattices", Proc. SPIE 2697, Oxide Superconductor Physics and Nano-Engineering II, (5 July 1996); https://doi.org/10.1117/12.250242
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Cited by 13 scholarly publications.
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KEYWORDS
Superlattices

Heterojunctions

Thin films

Semiconductors

Superconductors

Crystals

Atomic force microscopy

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