Defect formation and carrier doping in epitaxial films of the infinite layer compound

Ron Feenstra; Stephen J. Pennycook; M. F. Chisholm; N. D. Browning; J. D. Budai; David P. Norton; E. C. Jones; D. K. Christen; Toshiaki Matsumoto; Tomoji Kawai

doi:10.1117/12.250239

5 July 1996 Defect formation and carrier doping in epitaxial films of the infinite layer compound

Ron Feenstra, Stephen J. Pennycook, M. F. Chisholm, N. D. Browning, J. D. Budai, David P. Norton, E. C. Jones, D. K. Christen, Toshiaki Matsumoto, Tomoji Kawai

Author Affiliations +

Proceedings Volume 2697, Oxide Superconductor Physics and Nano-Engineering II; (1996) https://doi.org/10.1117/12.250239
Event: Photonics West '96, 1996, San Jose, CA, United States

Abstract

The correlation between defect formation and carrier doping in epitaxial films of the infinite layer compound SrCuO₂ has been studied via molecular beam epitaxy controlled layer-by-layer growth experiments, chemically resolved scanning transmission electron microscopy,scanning tunneling microscopy, x-ray diffraction, electrical transport measurements, and post-growth oxidation-reduction annealing. Based on the complementary information provided by these experiments, it is concluded that the carrier doping is dominated by the formation of an electro-doped, Sr and O deficient matrix under mildly oxidizing growth conditions. Hole-doping is induced by extended defects containing excess Sr atoms and may lead to superconductivity after high- temperature oxidation.

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Ron Feenstra, Stephen J. Pennycook, M. F. Chisholm, N. D. Browning, J. D. Budai, David P. Norton, E. C. Jones, D. K. Christen, Toshiaki Matsumoto, and Tomoji Kawai "Defect formation and carrier doping in epitaxial films of the infinite layer compound", Proc. SPIE 2697, Oxide Superconductor Physics and Nano-Engineering II, (5 July 1996); https://doi.org/10.1117/12.250239

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