Determination of technological process-induced variations of silicon recombination parameters by infrared and microwave absorption

E. Gaubas; A. Kaniava

doi:10.1117/12.226231

3 November 1995 Determination of technological process-induced variations of silicon recombination parameters by infrared and microwave absorption

E. Gaubas, A. Kaniava

Author Affiliations +

Proceedings Volume 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1995) https://doi.org/10.1117/12.226231
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1995, Kiev, Ukraine

Abstract

Contactless techniques of infrared and microwave absorption by free carriers for simultaneous determination of the set of recombination parameters by reconcilable experimental measurements and computer simulation are presented. Variations of recombination parameters induced by technological processes in silicon wafers are discussed.

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E. Gaubas and A. Kaniava "Determination of technological process-induced variations of silicon recombination parameters by infrared and microwave absorption", Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); https://doi.org/10.1117/12.226231

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