Surface photovoltage analysis of iron contamination in silicon processing and the relation to gate oxide integrity

Worth B. Henley

doi:10.1117/12.221194

18 September 1995 Surface photovoltage analysis of iron contamination in silicon processing and the relation to gate oxide integrity

Worth B. Henley

Author Affiliations +

Proceedings Volume 2638, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing II; (1995) https://doi.org/10.1117/12.221194
Event: Microelectronic Manufacturing '95, 1995, Austin, TX, United States

Abstract

Surface photovoltage (SPV), a contactless optical technique for measuring minority carrier lifetime, is used to quantify the relationship between silicon iron contamination level and thin gate oxide integrity. Iron concentration levels in the range of 1 X 10¹⁰ cm^-3 to 5 X 10¹³ cm^-3 are evaluated for oxide thicknesses of 8 to 20 nm. Ramp voltage electrical breakdown and time dependant dielectric breakdown measurement on the iron contaminated gate oxide capacitors are reported. Distinct iron contamination threshold limits based on defect density and gate oxide integrity evaluate cleaning efficiencies and metallic cross contamination effects during thermal processing contamination. Iron-silicide precipitation kinetics are investigated by the lifetime analysis procedure.

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Worth B. Henley "Surface photovoltage analysis of iron contamination in silicon processing and the relation to gate oxide integrity", Proc. SPIE 2638, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing II, (18 September 1995); https://doi.org/10.1117/12.221194

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