Oxide charging induced by electron exposure in ion implant

Alan Stuber; John K. Lowell

doi:10.1117/12.221195

18 September 1995 Oxide charging induced by electron exposure in ion implant

Alan Stuber, John K. Lowell

Proceedings Volume 2638, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing II; (1995) https://doi.org/10.1117/12.221195
Event: Microelectronic Manufacturing '95, 1995, Austin, TX, United States

Abstract

The use of electron showers (flood guns) during ion implantation has been used industry-wide to compensate the parasitic effects of electrostatic charging induced by energetic ion beams impinging on the surface during processing. Moreoever for damage protection the wafer may be covered by a protective oxide which inhibits the majority of secondary electrons in the exposure path from reaching the wafer surface. Previous work has shown that the surface barrier of the oxidized surface does not change significantly when flood guns are used which supports this premise. However, in this work we are interested in what effects the electron exposure may have on the oxide potential.

Citation Download Citation

Alan Stuber and John K. Lowell "Oxide charging induced by electron exposure in ion implant", Proc. SPIE 2638, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing II, (18 September 1995); https://doi.org/10.1117/12.221195

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