Radiation damages in semiconductors tested by exoelectron spectroscopy

Yuri Dekhtyar

doi:10.1117/12.221450

22 September 1995 Radiation damages in semiconductors tested by exoelectron spectroscopy

Yuri Dekhtyar

Proceedings Volume 2635, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis; (1995) https://doi.org/10.1117/12.221450
Event: Microelectronic Manufacturing '95, 1995, Austin, TX, United States

Abstract

A radiation treatment is used often to manufacture of semiconductor chips. Their surface layers excited by this way have the important role in reliability of produced devices. Thus, a response of the surface on the radiation affection is necessary to test. The problem may be solved using a method providing information about point defects inserted due to the considered treatment. Exoelectron spectroscopy (ES) has been developed to hit this target, taking into account an evaluation of the single imperfections concentration and their relaxation processes.

Citation Download Citation

Yuri Dekhtyar "Radiation damages in semiconductors tested by exoelectron spectroscopy", Proc. SPIE 2635, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis, (22 September 1995); https://doi.org/10.1117/12.221450

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