Meeting advanced pattern inspection system requirements for 0.25-um technology and beyond

Brian M. Trafas; Marylyn Hoy Bennett; M. Godwin

doi:10.1117/12.221460

22 September 1995 Meeting advanced pattern inspection system requirements for 0.25-μm technology and beyond

Brian M. Trafas, Marylyn Hoy Bennett, M. Godwin

Proceedings Volume 2635, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis; (1995) https://doi.org/10.1117/12.221460
Event: Microelectronic Manufacturing '95, 1995, Austin, TX, United States

Abstract

An advanced in-line patterned wafer defect detection system has been developed in a Joint Development Project (JDP) with Tencor Instruments and SEMATECH. The JDP, known as J101, was initiated due to critical needs identified in a SEMATECH Phase 4/5 (0.25 micrometers ) Workshop. The goal of the workshop was to identify the most suitable and cost-effective technology to meet the in-line monitoring needs specified in the National Technology Roadmap for Semiconductors (NTRS), also known as the SIA technology roadmap. This paper will review the inspection requirements identified in the SEMATECH Phase 4/5 (0.25 micrometers ) Workshop, specify the objectives and milestones of the JDP, provide a technology overview of the system, and show results obtained by using the system during alpha and prototype characterization.

Citation Download Citation

Brian M. Trafas, Marylyn Hoy Bennett, and M. Godwin "Meeting advanced pattern inspection system requirements for 0.25-μm technology and beyond", Proc. SPIE 2635, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis, (22 September 1995); https://doi.org/10.1117/12.221460

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