Correlation between space charge created by Fowler-Nordheim electron injections and charge to breakdown (QBD) of gate oxides in MOS capacitors: modeling and experiment

J. Oualid; E. Ciantar; J. M. Moragues; Bruno Sagnes; Philippe Boivin; G. Blaise

doi:10.1117/12.221437

22 September 1995 Correlation between space charge created by Fowler-Nordheim electron injections and charge to breakdown (Q_BD) of gate oxides in MOS capacitors: modeling and experiment

J. Oualid, E. Ciantar, J. M. Moragues, Bruno Sagnes, Philippe Boivin, G. Blaise

Author Affiliations +

Proceedings Volume 2635, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis; (1995) https://doi.org/10.1117/12.221437
Event: Microelectronic Manufacturing '95, 1995, Austin, TX, United States

Abstract

The experiments confirm that the charge to breakdown Q_BD, often used for oxide monitoring, is closely related to the positive space charge formed in the bulk of the oxide layer during electron injections. The results are justified by assuming that breakdown occurs when a critical net and effective number of charges per unit area, N_C equals 5 10¹² cm^-2, is reached in SiO₂ layers. An interpretation of breakdown induced by a positive charge is proposed, based on the polarization/relaxation process previously used to explain the electron charge induced breakdown process.

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J. Oualid, E. Ciantar, J. M. Moragues, Bruno Sagnes, Philippe Boivin, and G. Blaise "Correlation between space charge created by Fowler-Nordheim electron injections and charge to breakdown (Q_BD) of gate oxides in MOS capacitors: modeling and experiment", Proc. SPIE 2635, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis, (22 September 1995); https://doi.org/10.1117/12.221437

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