Paper
8 December 1995 Defect printability study of attenuated phase-shifting masks for specifying inspection sensitivity
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Abstract
Defect printability of attenuated phase-shifting masks for a dot defect in isolated hole and space patterns is evaluated by EDM (exposure-defocus and mask fabrication latitudes) process windows and process latitude functions which are derived from a series of EDM windows. The allowable defect size is confirmed to be 0.08 (lambda) /NA both for the hole and space patterns with the practical process latitude consideration. By the evaluation of the process latitude functions, it is found that an influence range by the dot defect is extended up to 20 times of the defect size in units on a wafer.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Minoru Sugawara, Kiichi Ishikawa, Hiroichi Kawahira, Ichiro Kagami, and Satoru Nozawa "Defect printability study of attenuated phase-shifting masks for specifying inspection sensitivity", Proc. SPIE 2621, 15th Annual BACUS Symposium on Photomask Technology and Management, (8 December 1995); https://doi.org/10.1117/12.228199
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KEYWORDS
Photomasks

Semiconducting wafers

Transmittance

Inspection

Phase shifts

Defect inspection

Optical proximity correction

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