Negative electron affinity on GaAs(110) with Cs and NF3: a surface science study

Renyu Cao; Huan Tang; Piero A. Pianetta

doi:10.1117/12.221412

26 September 1995 Negative electron affinity on GaAs(110) with Cs and NF₃: a surface science study

Renyu Cao, Huan Tang, Piero A. Pianetta

Proceedings Volume 2550, Photodetectors and Power Meters II; (1995) https://doi.org/10.1117/12.221412
Event: SPIE's 1995 International Symposium on Optical Science, Engineering, and Instrumentation, 1995, San Diego, CA, United States

Abstract

We have investigated the formation and the nature of negative electron affinity on p-type GaAs surfaces prepared with Cs and NF₃ as the fluorine carrier. The results have been compared with those obtained from the Cs-O prepared NEA photocathodes. High resolution photoelectron core level and valence band spectroscopy is utilized to reveal the underlying physics and chemistry during the NEA activation process. We have shown clear evidence of dipole formation both at the physics and chemistry during the NEA activation process. We have shown clear evidence of dipole formation both at the Cs/GaAs interface and in the activation layer. We also demonstrate that no chemcial reaction takes place between fluorine and the substrate. Other aspects related to the NEA formation such as the so-called two-stage activation, activation layer stoichiometry, and aging process have been studied. The study of this model system leads us to conclude that the NEA formation can be adequately explained by the double dipole layer model.

Citation Download Citation

Renyu Cao, Huan Tang, and Piero A. Pianetta "Negative electron affinity on GaAs(110) with Cs and NF₃: a surface science study", Proc. SPIE 2550, Photodetectors and Power Meters II, (26 September 1995); https://doi.org/10.1117/12.221412

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