Thermal instability observation in power transistors by radiometric detection of temperature maps

Sergio Pica; G. Scarpetta

doi:10.1117/12.204844

28 March 1995 Thermal instability observation in power transistors by radiometric detection of temperature maps

Sergio Pica, G. Scarpetta

Proceedings Volume 2473, Thermosense XVII: An International Conference on Thermal Sensing and Imaging Diagnostic Applications; (1995) https://doi.org/10.1117/12.204844
Event: SPIE's 1995 Symposium on OE/Aerospace Sensing and Dual Use Photonics, 1995, Orlando, FL, United States

Abstract

In this paper the thermal instability problems in semiconductor power devices are briefly presented. Experimental observations about these phenomena can be achieved by using infrared radiometry to obtain a temperature mapping of the surface of the devices. Our system, based on a radiometric microscope with an automatic scanning and elaboration system, is described. Finally, some results of our system, consisting in dynamic temperature maps obtained on two different devices, are presented, and the causes of their different thermal instability are briefly discussed.

Citation Download Citation

Sergio Pica and G. Scarpetta "Thermal instability observation in power transistors by radiometric detection of temperature maps", Proc. SPIE 2473, Thermosense XVII: An International Conference on Thermal Sensing and Imaging Diagnostic Applications, (28 March 1995); https://doi.org/10.1117/12.204844

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