Paper
26 May 1995 Contributions of stepper lenses to systematic CD errors within exposure fields
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Abstract
We have studied systematic line width (CD) errors as functions of field coordinates for three late-model i-line steppers from different manufacturers by measuring electrical resistance of lines patterned in poly-silicon. The combination of reticle errors with non-linear imaging accounts for a significant fraction of the total line width errors. After removing the effects of reticle errors, CD contour maps are consistent with aberration patterns in which the Strehl intensity is highest at the center of the field.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hua-Yu Liu, Crid Yu, and Robert E. Gleason "Contributions of stepper lenses to systematic CD errors within exposure fields", Proc. SPIE 2440, Optical/Laser Microlithography VIII, (26 May 1995); https://doi.org/10.1117/12.209312
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CITATIONS
Cited by 11 scholarly publications.
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KEYWORDS
Reticles

Semiconducting wafers

Critical dimension metrology

Error analysis

Manufacturing

Resistance

Lenses

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