Paper
9 June 1995 Direct evaluation of airborne contamination in chemically amplified resist films
Yoshio Yamashita, Takao Taguchi, Takeo Watanabe
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Abstract
Airborne contamination in chemically amplified resist films was evaluated by monitoring deprotection reaction using an IR spectrometer. T-BOC protected (20, 50 and 100 mol%) m- and p-cresol novolak resins and triphenyltriflate were used as a matrix polymer and a photoacid generator (PAG), respectively. Three levels of clean environments whose base contaminant (NH4+) concentrations were 50 - 80, 5 - 10 and less than 1 ppb, were prepared for the experiments. In order to determine the delay effects precisely, other processes including baking, exposure, and storage during process intervals were conducted in a base-free environment. The PEB delay effect as well as radiation sensitivity without delay depended on the t-BOC content, and the best results were obtained at 50% and 25 - 50% t- BOC contents in m-cresol novolak and p-cresol novolak systems, respectively.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yoshio Yamashita, Takao Taguchi, and Takeo Watanabe "Direct evaluation of airborne contamination in chemically amplified resist films", Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995); https://doi.org/10.1117/12.210385
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KEYWORDS
Contamination

Chemically amplified resists

Polymers

Environmental sensing

Absorption

Deep ultraviolet

Photoresist processing

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