Geometry of x-ray point source proximity printing, Part I: linewidth control.

Peter A. Hollanda

doi:10.1117/12.209174

19 May 1995 Geometry of x-ray point source proximity printing, Part I: linewidth control

Peter A. Hollanda

Proceedings Volume 2437, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V; (1995) https://doi.org/10.1117/12.209174
Event: SPIE's 1995 Symposium on Microlithography, 1995, Santa Clara, CA, United States

Abstract

In this paper the relationship between exposure geometry and intrafield linewidth variations is investigated. The results indicate that (1) minimum linewidth occurs at the center of field where the optical axis intersects the mask/wafer planes, (2) width of vertical and horizontal lines increase linearly with site coordinates x and y, respectively, (3) source-mask field centering errors increase the intrafield linewidth variation, (4) linewidth measurement accuracy is site-dependent because of sloping effect that vary with x and y but remain constant along a column or row, and (5) current intrafield linewidth data characterizing linewidth control in x-ray point-source proximity printing systems.

Citation Download Citation

Peter A. Hollanda "Geometry of x-ray point source proximity printing, Part I: linewidth control", Proc. SPIE 2437, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V, (19 May 1995); https://doi.org/10.1117/12.209174

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