Laser processing of thin films for optoelectronic devices

Hideo Sugiura

doi:10.1117/12.206259

10 April 1995 Laser processing of thin films for optoelectronic devices

Hideo Sugiura

Proceedings Volume 2403, Laser-Induced Thin Film Processing; (1995) https://doi.org/10.1117/12.206259
Event: Photonics West '95, 1995, San Jose, CA, United States

Abstract

This paper reviews the laser processing of II-VI and III-V compound semiconductors for optoelectronic devices. when a laser beam scanning system is combined with MBE or MOCVD apparatus, the resultant growth process is called laser-assisted epitaxy. Laser irradiation of the films has various effects, depending on the growth conditions: doping efficiency, film growth rate, and film composition are affected. Using these effects, laser-assisted epitaxy has been used to make photodetectors, laser diodes, and integrated devices for multiwavelength transmission.

Citation Download Citation

Hideo Sugiura "Laser processing of thin films for optoelectronic devices", Proc. SPIE 2403, Laser-Induced Thin Film Processing, (10 April 1995); https://doi.org/10.1117/12.206259

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