ZnSe/GaAs(100) thin layers, ZnS-ZnSe-ZnS/GaAs(100) single quantum well structures and ZnS/ZnSe/GaAs(100) superlattices grown by photoassisted VPE

Alexander Vladimirov Kovalenko; V. V. Tishchenko

doi:10.1117/12.206915

24 April 1995 ZnSe/GaAs(100) thin layers, ZnS-ZnSe-ZnS/GaAs(100) single quantum well structures and ZnS/ZnSe/GaAs(100) superlattices grown by photoassisted VPE

Alexander Vladimirov Kovalenko, V. V. Tishchenko

Author Affiliations +

Proceedings Volume 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices; (1995) https://doi.org/10.1117/12.206915
Event: Photonics West '95, 1995, San Jose, CA, United States

Abstract

It has been shown that photo-assisted VPE (radiation source He-Cd laser hv equals 2,807 eV, P equals 0,8 mW/cm²) at low substrate temperatures (170 - 350 °C) and big temperature gradient (200 - 250 °C/cm) give results in extremely pure layers II-VI materials such as ZnSe/(100). Using this technology the single quantum well structures of ZnS-ZnSe-ZnS/GaAs (100) type and ZnS/ZnSe/GaAs(100) superlattices have been grown for the first time. Reflection and photoluminescence spectra of the obtained structures have been studied.

Citation Download Citation

Alexander Vladimirov Kovalenko and V. V. Tishchenko "ZnSe/GaAs(100) thin layers, ZnS-ZnSe-ZnS/GaAs(100) single quantum well structures and ZnS/ZnSe/GaAs(100) superlattices grown by photoassisted VPE", Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); https://doi.org/10.1117/12.206915

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