Time-resolved contrast in near-field scanning optical microscopy of semiconductors

Andres H. La Rosa; Catherine L. Jahncke; Hans D. Hallen

doi:10.1117/12.205917

30 March 1995 Time-resolved contrast in near-field scanning optical microscopy of semiconductors

Andres H. La Rosa, Catherine L. Jahncke, Hans D. Hallen

Proceedings Volume 2384, Scanning Probe Microscopies III; (1995) https://doi.org/10.1117/12.205917
Event: Photonics West '95, 1995, San Jose, CA, United States

Abstract

We demonstrate the ability of near-field scanning optical microscopy (NSOM) technique to detect inhomogeneities of the dynamics of excess carriers in oxidized silicon wafers. NSOM is used to improve the spatial resolution of a standard IR-scattering optical technique, which is carried out in a noncontact fashion. Continuous wave infrared light is used as a detector of the time dependent carrier population produced by a pulsed visible laser. We will show high resolution images of carrier lifetime, and discuss some aspects of the NSOM measurement that differentiate it from its far field counterpart.

Citation Download Citation

Andres H. La Rosa, Catherine L. Jahncke, and Hans D. Hallen "Time-resolved contrast in near-field scanning optical microscopy of semiconductors", Proc. SPIE 2384, Scanning Probe Microscopies III, (30 March 1995); https://doi.org/10.1117/12.205917

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