Nonlinear mode interaction in ridge waveguide diode lasers

Edward U. Rafailov; V. B. Khalfin; Daniil A. Livshits; Dmitriy N. Marinskiy; P. V. Studenkov; Alexei S. Trifonov; Konstantin I. Urikh

doi:10.1117/12.208456

28 April 1995 Nonlinear mode interaction in ridge waveguide diode lasers

Edward U. Rafailov, V. B. Khalfin, Daniil A. Livshits, Dmitriy N. Marinskiy, P. V. Studenkov, Alexei S. Trifonov, Konstantin I. Urikh

Author Affiliations +

Proceedings Volume 2382, Laser Diodes and Applications; (1995) https://doi.org/10.1117/12.208456
Event: Photonics West '95, 1995, San Jose, CA, United States

Abstract

Spectra of some ridge-waveguide lasers grown by metal-organic chemical vapor deposition (MOCVD) undergo a reversible transformation at a certain value of drive current -- usually from 5 to 10 thresholds. When the current is increased past this point, the spectrum abruptly widens and its amplitude drops correspondingly. In the widened spectrum a structure with period equal to longitudinal mode separation can be seen. We call this effect `spectral collapse.' The effect seems to be typical for ridge-waveguide lasers with ternary active regions and independent of active region strain. Data on `collapse' in both cw and pulsed modes at different temperatures suggest its connection with active region overheating. The intensity noise versus current dependence for some of the lasers reveals two peaks, one near the threshold and the other near the `spectral collapse' point. This led us to a suggestion that the `collapse' can be explained by nonlinear mode interaction. Some LPE-grown InGaAsP/GaAs lasers of similar design also exhibit spectral collapse while other samples from the same wafers do not, which may be evidence of a competition between nonlinear effects that cause spectral collapse and continuous widening of the spectrum with current due to spinodal decomposition in quaternary active region.

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Edward U. Rafailov, V. B. Khalfin, Daniil A. Livshits, Dmitriy N. Marinskiy, P. V. Studenkov, Alexei S. Trifonov, and Konstantin I. Urikh "Nonlinear mode interaction in ridge waveguide diode lasers", Proc. SPIE 2382, Laser Diodes and Applications, (28 April 1995); https://doi.org/10.1117/12.208456

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KEYWORDS

Semiconductor lasers

Waveguide lasers

Laser damage threshold

Waveguides

Metalorganic chemical vapor deposition

Reactive ion etching

Semiconducting wafers

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