Computer modeling of carrier transport in binary lead salt photodiodes

Antoni Rogalski; Robert Ciupa; Hans Zogg

doi:10.1117/12.224949

16 October 1995 Computer modeling of carrier transport in binary lead salt photodiodes

Antoni Rogalski, Robert Ciupa, Hans Zogg

Proceedings Volume 2373, Solid State Crystals: Materials Science and Applications; (1995) https://doi.org/10.1117/12.224949
Event: Solid State Crystals: Materials Science and Applications, 1994, Zakopane, Poland

Abstract

A numerical technique has been used to solve the carrier transport equations for n⁺- p PbS, PbSe, and PbTe photodiode configurations. The model computes the spatial distribution of the electric field, electron and hole concentrations, and the generation- recombination mechanisms. Also the effect of doping profiles on the photodiode parameters (R_oA product, quantum efficiency) is analyzed. Results of calculations indicate the potential possibilities of constructing higher quality photodiodes. The R_oA product of experimentally measured PbS, PbSe, and PbTe photodiodes at low temperatures is controlled by Shockley-Read-Hall generation-recombination mechanism. In the range of higher temperatures, the influence of auger generation-recombination mechanism is also appreciable.

Citation Download Citation

Antoni Rogalski, Robert Ciupa, and Hans Zogg "Computer modeling of carrier transport in binary lead salt photodiodes", Proc. SPIE 2373, Solid State Crystals: Materials Science and Applications, (16 October 1995); https://doi.org/10.1117/12.224949

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