Emission local testing of mechanical stresses in surface layer of silicon

A. Balodis; Yuri Dekhtyar; G. Sagalovich

doi:10.1117/12.186754

14 September 1994 Emission local testing of mechanical stresses in surface layer of silicon

A. Balodis, Yuri Dekhtyar, G. Sagalovich

Proceedings Volume 2334, Microelectronics Manufacturability, Yield, and Reliability; (1994) https://doi.org/10.1117/12.186754
Event: Microelectronic Manufacturing, 1994, Austin, TX, United States

Abstract

Mechanical stresses change energy gap in semiconductors. Thus, a photoelectric work function is dependent on this effect. In such a view surface layers elastic deformations are recorded by measuring of photoelectron emission quantum yield.

Citation Download Citation

A. Balodis, Yuri Dekhtyar, and G. Sagalovich "Emission local testing of mechanical stresses in surface layer of silicon", Proc. SPIE 2334, Microelectronics Manufacturability, Yield, and Reliability, (14 September 1994); https://doi.org/10.1117/12.186754

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