Electromigration characteristics for Al-Ge-Cu

Kuniko Kikuta; Takamaro Kikkawa

doi:10.1117/12.186744

14 September 1994 Electromigration characteristics for Al-Ge-Cu

Kuniko Kikuta, Takamaro Kikkawa

Proceedings Volume 2334, Microelectronics Manufacturability, Yield, and Reliability; (1994) https://doi.org/10.1117/12.186744
Event: Microelectronic Manufacturing, 1994, Austin, TX, United States

Abstract

Aluminum-germanium-copper (Al-Ge-Cu) alloy is a promising material for interconnections to fill contact holes and vias using low temperature reflow sputtering due to its lower melting point than conventional Al alloys. The reflow temperature for contact- and via-filling decreases as the Ge concentration in Al increases. The suitable Ge concentration for reflow sputtering at around 400 degree(s)C is 1 wt.% of Ge. The electromigration characteristics for the Al-1%Ge-0.5%Cu alloy are investigated. It becomes clear that electromigration lifetime for Al-1%Ge-0.5%Cu is similar to that for Al-1%Si-0.5%Cu. The activation energy and n value are 0.56 eV and 3.4 for Al-1%Ge-0.5%Cu, and 0.64 eV and 4.7 for Al-1%Si-0.5%Cu. It is also found that intermetallic compounds of Al-Ti-Ge are formed at grain boundaries after reflowing.

Citation Download Citation

Kuniko Kikuta and Takamaro Kikkawa "Electromigration characteristics for Al-Ge-Cu", Proc. SPIE 2334, Microelectronics Manufacturability, Yield, and Reliability, (14 September 1994); https://doi.org/10.1117/12.186744

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