Photoelectric properties of (n)InSb-(n)GaAs thin-film heterojunctions, and InAs1-xSbx thin layers obtained by laser-pulse deposition method

A. G. Alexanian

doi:10.1117/12.2303277

1 January 1994 Photoelectric properties of (n)InSb-(n)GaAs thin-film heterojunctions, and InAs1-xSbx thin layers obtained by laser-pulse deposition method

A. G. Alexanian

Author Affiliations +

Proceedings Volume 2250, International Conference on Millimeter and Submillimeter Waves and Applications 1994; 225078 (1994) https://doi.org/10.1117/12.2303277
Event: Millimeter and Submillimeter Waves and Applications: International Conference, 1994, San Diego, CA, United States

Abstract

Using the laser-pulse deposition (LPD) method, thin-film hetero- junctions (HJ) (n)InSb-(n)GaAs mismatched by the lattice parameter (--13%) were obtained and analyzed, as well as the thin layers (0.1 to 0.5 pm) of semiconductor solid solution InAs..... Sb 1 ..

Citation Download Citation

A. G. Alexanian "Photoelectric properties of (n)InSb-(n)GaAs thin-film heterojunctions, and InAs1-xSbx thin layers obtained by laser-pulse deposition method", Proc. SPIE 2250, International Conference on Millimeter and Submillimeter Waves and Applications 1994, 225078 (1 January 1994); https://doi.org/10.1117/12.2303277

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