Paper
13 July 1994 Structural and interfacial studies on Zn1-xMgxSySe1-y/ZnSe buffer layer/GaAs heterostructures
Li-Hsin Kuo, Lourdes Salamanca-Riba, Bor-Jen Wu, Jim M. DePuydt, S. Guha, Greg Meis Haugen
Author Affiliations +
Abstract
(100) composition modulation as well as (101) and (101) tweed strain contrast were observed in Zn1-xMgxSySe1-y epitaxial films grown on ZnSe buffer layers. Surface buckling of the TEM plan-view specimens along the (110) direction is induced by the modulated structure in the Zn1-xMgxSySe1-y films. High quality Zn1-xMgxSySe1-y films were obtained by growing a ZnSe buffer layer on As-stabilized GaAs substrates with Zn treatment of the substrate prior to the growth of the film. In these samples, no vacancy-contained Ga2Se3 interfacial layer was found at the ZnSe/GaAs interface. Samples with rough ZnSe/GaAs interfaces contained a high density of Frank partial dislocations originating at the ZnSe/GaAs interface. The interface roughness is believed to result from an As-rich GaAs surface after the oxide desorption.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Li-Hsin Kuo, Lourdes Salamanca-Riba, Bor-Jen Wu, Jim M. DePuydt, S. Guha, and Greg Meis Haugen "Structural and interfacial studies on Zn1-xMgxSySe1-y/ZnSe buffer layer/GaAs heterostructures", Proc. SPIE 2228, Producibility of II-VI Materials and Devices, (13 July 1994); https://doi.org/10.1117/12.179652
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KEYWORDS
Interfaces

Selenium

Zinc

Heterojunctions

Magnesium

Gallium arsenide

Modulation

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