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23 June 1994 Functional variation of dual gate MOS-JFET CCD test structure
Quiesup Kim, M. H. Zakharia
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Proceedings Volume 2226, Infrared Readout Electronics II; (1994) https://doi.org/10.1117/12.178488
Event: SPIE's International Symposium on Optical Engineering and Photonics in Aerospace Sensing, 1994, Orlando, FL, United States
Abstract
Drain voltages of a test structure of dual gate MOS-JFET CCD (TIJ J032) were measured by an advanced laser scanner. The potential variation of the test structure at various source and gate voltages were measured by monitoring drain voltages with respect to the scanning laser position. In this report, a fine continuous, constant energy He-Ne laser beam of the Multipurpose Microelectronic Advanced Laser Scanner is utilized for the characterization of local variation of the sensor performance within the test structure.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
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Quiesup Kim and M. H. Zakharia "Functional variation of dual gate MOS-JFET CCD test structure", Proc. SPIE 2226, Infrared Readout Electronics II, (23 June 1994); https://doi.org/10.1117/12.178488
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KEYWORDS
Charge-coupled devices
Laser scanners
Helium neon lasers
Microelectronics
Sensor performance
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