Performance of generation III 640 x 480 PtSi MOS array

Thomas S. Villani; Benjamin J. Esposito; T. J. Pletcher; Donald J. Sauer; Peter A. Levine; Frank V. Shallcross; Grazyna M. Meray; John R. Tower

doi:10.1117/12.179685

15 July 1994 Performance of generation III 640 x 480 PtSi MOS array

Thomas S. Villani, Benjamin J. Esposito, T. J. Pletcher, Donald J. Sauer, Peter A. Levine, Frank V. Shallcross, Grazyna M. Meray, John R. Tower

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Proceedings Volume 2225, Infrared Detectors and Focal Plane Arrays III; (1994) https://doi.org/10.1117/12.179685
Event: SPIE's International Symposium on Optical Engineering and Photonics in Aerospace Sensing, 1994, Orlando, FL, United States

Abstract

The design and performance of a third generation 640(H) X 480(V) PtSi focal plane array is presented. The 3 to 5 micron MWIR focal plane array supports interlaced, progressive scan, and subframe readout under control of on-chip digital decoders. The new design utilizes 1.25 micrometers design rules to achieve a 50% fill-factor, a noise equivalent delta temperature of <0.07 C (f/1.5, 30 Hz, 300 K), and a saturation level >1.5 X 10⁶e. The power dissipation is less than 110 mW.

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Thomas S. Villani, Benjamin J. Esposito, T. J. Pletcher, Donald J. Sauer, Peter A. Levine, Frank V. Shallcross, Grazyna M. Meray, and John R. Tower "Performance of generation III 640 x 480 PtSi MOS array", Proc. SPIE 2225, Infrared Detectors and Focal Plane Arrays III, (15 July 1994); https://doi.org/10.1117/12.179685

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