Nearly Perfect Reticles For Direct Wafer Steppers

Harry L. Coleman

doi:10.1117/12.958619

5 September 1980 Nearly Perfect Reticles For Direct Wafer Steppers

Harry L. Coleman

Proceedings Volume 0221, Developments in Semiconductor Microlithography V; (1980) https://doi.org/10.1117/12.958619
Event: Semiconductor Microlithography V, 1980, San Jose, United States

Abstract

Methods of locating and correcting' defects on 10X reticles used for optical step-and-repeat on silicon wafers are presented. The impact of defect type, size, location, and wafer processing on VLSI devices with 1 to 3μm geometries over large clear and dark fields is examined and efforts to minimize defects by improving equipment and materials are discussed. Data gathered from visual and computer analysis are also included.

Citation Download Citation

Harry L. Coleman "Nearly Perfect Reticles For Direct Wafer Steppers", Proc. SPIE 0221, Developments in Semiconductor Microlithography V, (5 September 1980); https://doi.org/10.1117/12.958619

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