Paper
16 May 1994 Materials evaluation of antireflective coatings for single-layer 193-nm lithography
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Abstract
A survey of optical constants for a variety of materials measured at 193 nm suggests that antireflection measures will be necessary for single-layer resist lithography at 193 nm. The extent to which standing waves occur in 193- nm resists is similar in magnitude to those occurring at 248 nm. To help reduce these effects, a new spin-on antireflective layer has been developed. It is composed of a polymeric dye in a phase-compatible blend with a transparent base polymer, can be thermally cured to render it insoluble, and is compatible with chemically amplified resists. In addition to this spin-on material, extension of existing 248-nm dry-deposited antireflective layers to 193 nm should allow for either spin-on or dry-deposited antireflection coatings for 193-nm lithography.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Roderick R. Kunz and Robert D. Allen "Materials evaluation of antireflective coatings for single-layer 193-nm lithography", Proc. SPIE 2195, Advances in Resist Technology and Processing XI, (16 May 1994); https://doi.org/10.1117/12.175358
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CITATIONS
Cited by 7 scholarly publications and 7 patents.
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KEYWORDS
Refractive index

Antireflective coatings

Reflectivity

Photoresist materials

Polymers

Lithography

Silicon

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