High-mobility diamond

Maurice I. Landstrass

doi:10.1117/12.171765

1 April 1994 High-mobility diamond

Maurice I. Landstrass

Proceedings Volume 2151, Diamond-Film Semiconductors; (1994) https://doi.org/10.1117/12.171765
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

Recent improvements in the CVD diamond deposition process have made possible the fabrication of diamond photoconductive diodes with carrier mobility and lifetime exceeding the values typical of natural gemstones. One of the more surprising recent results is that the best room-temperature carrier properties have been measured on polycrystalline diamond films. The combined electron- hole mobility, as measured by transient photoconductivity at low carrier densities, is 4000 square centimeters per volt per second at electric field of 200 volts per centimeter and is comparable to that of the best single-crystal IIa natural diamonds. Carrier lifetimes measured under the same conditions are 150 picoseconds for the CVD diamond films. The collection distance within the diamond films, at the highest applied fields, is comparable to the average film grain size, indicative of little or no carrier scattering at grain boundaries. A comparison of SIMS measurements with electrical results suggest that impurity incorporation in the near grain boundary regions are responsible for controlling the carrier mobility.

Citation Download Citation

Maurice I. Landstrass "High-mobility diamond", Proc. SPIE 2151, Diamond-Film Semiconductors, (1 April 1994); https://doi.org/10.1117/12.171765

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