InTISb alloys for infrared detection

Erwan Bigan; Yoon-Ho Choi; G. Labeyrie; Manijeh Razeghi

doi:10.1117/12.177130

2 June 1994 InTISb alloys for infrared detection

Erwan Bigan, Yoon-Ho Choi, G. Labeyrie, Manijeh Razeghi

Proceedings Volume 2145, Nonlinear Optics for High-Speed Electronics and Optical Frequency Conversion; (1994) https://doi.org/10.1117/12.177130
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

InTISb alloys have been grown by low-pressure metalorganic chemical vapor deposition, and characterized. Photoconductors exhibit a cutoff wavelength that can be tailored from 5.5 micrometers up to 9 micrometers by varying the thallium content. Experimental observations suggest that this can be further extended by increasing the thallium content. An InTISb photoconductor having a 9 micrometers cutoff wavelength exhibited a D* of 10⁹ cm Hz^1/2 W^-1 at 7-micrometers operating wavelength.

Citation Download Citation

Erwan Bigan, Yoon-Ho Choi, G. Labeyrie, and Manijeh Razeghi "InTISb alloys for infrared detection", Proc. SPIE 2145, Nonlinear Optics for High-Speed Electronics and Optical Frequency Conversion, (2 June 1994); https://doi.org/10.1117/12.177130

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