Use of optical characterization for optimization of epitaxial growth

Gary W. Wicks

doi:10.1117/12.176846

26 May 1994 Use of optical characterization for optimization of epitaxial growth

Gary W. Wicks

Proceedings Volume 2141, Spectroscopic Characterization Techniques for Semiconductor Technology V; (1994) https://doi.org/10.1117/12.176846
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

Optical spectroscopies of semiconductor crystals can be very useful for the optimization of epitaxial growth. This paper discusses two of the most useful optical measurements, photoluminescence and Raman spectroscopy, and their applications to III-IV epitaxial structures grown by molecular beam epitaxy and organo-metallic vapor phase epitaxy.

Citation Download Citation

Gary W. Wicks "Use of optical characterization for optimization of epitaxial growth", Proc. SPIE 2141, Spectroscopic Characterization Techniques for Semiconductor Technology V, (26 May 1994); https://doi.org/10.1117/12.176846

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