Reflection high-energy electron diffraction studies of epitaxial growth on corrugated semiconductor surfaces

Lutz Daeweritz; Richard Noetzel; Klaus H. Ploog

doi:10.1117/12.176845

26 May 1994 Reflection high-energy electron diffraction studies of epitaxial growth on corrugated semiconductor surfaces

Lutz Daeweritz, Richard Noetzel, Klaus H. Ploog

Author Affiliations +

Proceedings Volume 2141, Spectroscopic Characterization Techniques for Semiconductor Technology V; (1994) https://doi.org/10.1117/12.176845
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

Semiconductor surfaces develop orientation dependent morphologies during growth that can be used for fabrication of nanostructured materials. We have applied RHEED techniques to study during MBE the nanometer-scale morphologies on non-(001)-oriented GaAs surfaces and their evolution during heterogeneous deposition of AlAs. In particular, the growth behavior of the GaAs(311)Ga surface enables a controlled generation of an ordered surface corrugation. We report on two new methods for a direct synthesis of 1D structures that take advantage of an in- situ lateral patterning of the GaAs substrate: the growth of corrugated GaAs/AlAs heterostructures on the GaAs(311)Ga surface and the synthesis of doping wires by the combination lattice step growth on vicinal GaAs(001) surfaces with planar doping.

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Lutz Daeweritz, Richard Noetzel, and Klaus H. Ploog "Reflection high-energy electron diffraction studies of epitaxial growth on corrugated semiconductor surfaces", Proc. SPIE 2141, Spectroscopic Characterization Techniques for Semiconductor Technology V, (26 May 1994); https://doi.org/10.1117/12.176845

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