Absorption and emission characteristics of mesa and ridge waveguide diodes made from strain adjusted SImGEn superlattice and SI/GE quantum well layers grown by MBE

Hartmut Presting; Thomas Zinke; Armin O. Splett; Horst Kibbel

doi:10.1117/12.175728

11 May 1994 Absorption and emission characteristics of mesa and ridge waveguide diodes made from strain adjusted SI_mGE_n superlattice and SI/GE quantum well layers grown by MBE

Hartmut Presting, Thomas Zinke, Armin O. Splett, Horst Kibbel

Author Affiliations +

Proceedings Volume 2139, Quantum Well and Superlattice Physics V; (1994) https://doi.org/10.1117/12.175728
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

We have fabricated mesa and ridge waveguide diodes from Si/Ge quantum well (QW) and short-period superlattice samples deposited by MBE on a (100) Si substrate. We have grown Si/Ge/Si_1-xGe_x QW samples consisting of thin Ge wells where 20 MLs of Si are embedded in-between and followed by a SiGe layer elastically strained on a Si substrate as well as symmetrically strained on a strain symmetrizing buffer layer. We have also grown Si_mGe_n short-period, strained layer superlattices consisting of N periods of (m + n) monolayers per period which are deposited on a strain adjusting buffer layer. The edge emitting ridge waveguide diodes fabricated from this material with standard semiconductor processing techniques were polished on the <110> side faces and etched to a height of roughly 1.0 micrometers with lateral dimensions of roughly 100 micrometers width X 3 mm length. Also circular mesa diodes were fabricated with the same height and varying diameters from 100 micrometers to 800 micrometers and were provided with a metal ring contact on top defining the illumination window. Photocurrent and electroluminescence signals at h(nu) approximately 0.8 eV were detected at room temperature from QW samples. The emission characteristics as a function of strain and composition of the SLS and QW layers are discussed.

Citation Download Citation

Hartmut Presting, Thomas Zinke, Armin O. Splett, and Horst Kibbel "Absorption and emission characteristics of mesa and ridge waveguide diodes made from strain adjusted SI_mGE_n superlattice and SI/GE quantum well layers grown by MBE", Proc. SPIE 2139, Quantum Well and Superlattice Physics V, (11 May 1994); https://doi.org/10.1117/12.175728

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