Paper
30 August 1993 The control of gap width in the low-dimensionalsystems with CDW instability
A. I. Dmitriev
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Proceedings Volume 2104, 18th International Conference on Infrared and Millimeter Waves; 210439 (1993) https://doi.org/10.1117/12.2298549
Event: 18th International Conference on Infrared and Millimeter Waves, 1993, Colchester, United Kingdom
Abstract
The earlier studies we had carried on y- and 13-politype crystals of layered semiconductorInSe had shown a series of effects that are the properties of the structures of superlattice ( SL )type. It had been found that in the temperature range below 20 - 30 K the electron gas in InSe istwo-dimensional and degenerated. At the same temperatures the N-shaped regions of Volt-Amperecharacteristics ( VAC ) of InSe had been observed when the electric current impulses were along thetaxis of crystal ( perpendicular to the crystal layers plane ).
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. I. Dmitriev "The control of gap width in the low-dimensionalsystems with CDW instability", Proc. SPIE 2104, 18th International Conference on Infrared and Millimeter Waves, 210439 (30 August 1993); https://doi.org/10.1117/12.2298549
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KEYWORDS
Crystals

Temperature metrology

Resistance

Semiconductors

Tin

Control systems

Crystallography

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