High-selectivity magnetically enhanced reactive ion etching of boron nitride films

Donna R. Cote; Sonny Nguyen; David Dobuzinsky; Cathy Basa; Bernhard Neureither

doi:10.1117/12.167340

15 February 1994 High-selectivity magnetically enhanced reactive ion etching of boron nitride films

Donna R. Cote, Sonny Nguyen, David Dobuzinsky, Cathy Basa, Bernhard Neureither

Proceedings Volume 2091, Microelectronic Processes, Sensors, and Controls; (1994) https://doi.org/10.1117/12.167340
Event: Microelectronic Processing '93, 1993, Monterey, CA, United States

Abstract

Oxygen and tetrafluorocarbon magnetically enhanced reactive ion etching (MERIE) of plasma chemical vapor deposited boron nitride (BN) and silicon boron nitride (SiBN) was studied for both blanket and submicron patterned films. The relative etch selectivities of the BN and SiBN to oxide and nitride were determined. In general, oxygen-rich O₂/CF₄ MERIE produce very high etch selectivity results while maintaining vertical etch profiles. This etch process expands the potential for use of BN/SiBN in fabrication of sub-half micron devices.

Citation Download Citation

Donna R. Cote, Sonny Nguyen, David Dobuzinsky, Cathy Basa, and Bernhard Neureither "High-selectivity magnetically enhanced reactive ion etching of boron nitride films", Proc. SPIE 2091, Microelectronic Processes, Sensors, and Controls, (15 February 1994); https://doi.org/10.1117/12.167340

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