Al-Cu alloy etching using in-reactor aluminum chloride formation in static magnetron triode reactive ion etching

Masaaki Sato

doi:10.1117/12.167342

15 February 1994 Al-Cu alloy etching using in-reactor aluminum chloride formation in static magnetron triode reactive ion etching

Masaaki Sato

Author Affiliations +

Proceedings Volume 2091, Microelectronic Processes, Sensors, and Controls; (1994) https://doi.org/10.1117/12.167342
Event: Microelectronic Processing '93, 1993, Monterey, CA, United States

Abstract

This paper presents a new Al-Cu alloy etching system that uses aluminum chloride formed in static magnetron triode reactive ion etching (SMTRIE). An overview of SMTRIE is provided, along with a description of the mechanism of copper chloride vaporization with aluminum chloride. Four axisymmetric coils produce radial magnetic flux near and parallel to the etching cathode, and cylindrical magnetic flux parallel to the surrounding second side cathode. This field creates a radially uniform magnetron-type discharge. Etching results demonstrate the excellent uniformity of SMTRIE with low MOS gate damage.

Citation Download Citation

Masaaki Sato "Al-Cu alloy etching using in-reactor aluminum chloride formation in static magnetron triode reactive ion etching", Proc. SPIE 2091, Microelectronic Processes, Sensors, and Controls, (15 February 1994); https://doi.org/10.1117/12.167342

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