Paper
15 September 1993 Triple-level metal process for high-performance and high-density 0.6-μm/5-V application-specific integrated circuits
Sharad Prasad, M. Bruner, Fusen E. Chen, Mitan Gandhi, Y. C. Lu, Chiyi Y. Kao, Steve Yang, William Hata
Author Affiliations +
Abstract
In this paper a triple level metal interconnect process for a commercially available high density, high performance 0.6 micrometers /5V CMOS technology is described. Poly gates of 0.6 micrometers (Leff equals 0.45 micrometers ) were fabricated and then planarized by BPSG reflow and resist etch back. Blanket W and etch back were used to fill high aspect ratio contacts and vias with TiN as the nucleation barrier. Low temperature RTA was performed after Ti/TiN deposition, and rf etch was performed for contacts and vias respectively, prior to Ti/TiN depositing, to achieve reliable contacts and via resistance. Stable contacts/via resistance down to 0.7 micrometers with good junction integrity/stackability and negative metal enclosure have been demonstrated and been physically characterized by HTEM. TiN/Al-Cu/TiN was used for M1/M2/M3 interconnection and TEOS/resist etch back/TEOS refill was used for ILD1 and ILD2. A TEOS/nitride sandwich was used for final passivation. A satisfactory yield has been achieved on 2.9 cm2 die size with 0.6 million usable gates.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sharad Prasad, M. Bruner, Fusen E. Chen, Mitan Gandhi, Y. C. Lu, Chiyi Y. Kao, Steve Yang, and William Hata "Triple-level metal process for high-performance and high-density 0.6-μm/5-V application-specific integrated circuits", Proc. SPIE 2090, Multilevel Interconnection: Issues That Impact Competitiveness, (15 September 1993); https://doi.org/10.1117/12.156512
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KEYWORDS
Etching

Metals

Resistance

Tin

Application specific integrated circuits

CMOS technology

Reliability

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