Simplified air bridge technique using photoresist UV stabilization process

James Tajadod; Linda J. Insalaco

doi:10.1117/12.156524

15 September 1993 Simplified air bridge technique using photoresist UV stabilization process

James Tajadod, Linda J. Insalaco

Proceedings Volume 2090, Multilevel Interconnection: Issues That Impact Competitiveness; (1993) https://doi.org/10.1117/12.156524
Event: Microelectronic Processing '93, 1993, Monterey, CA, United States

Abstract

Due to their favorable structural and electrical properties, air bridges are used extensively by silicon and GaAs monolithic microwave integrated circuit (MMIC) designers. Fabrication of such structures using the conventional techniques is complex. In this paper novel construction of air bridge structures of up to 7.5 micrometers high using an ultra violet (UV) stabilized bi-layer photoresist process, evaporated metal scheme, and lift-off patterning procedure, is realized. Deep UV stabilization of positive photo resist is discussed. Removal of the hardened resist via organic photo resist stripper is addressed.

Citation Download Citation

James Tajadod and Linda J. Insalaco "Simplified air bridge technique using photoresist UV stabilization process", Proc. SPIE 2090, Multilevel Interconnection: Issues That Impact Competitiveness, (15 September 1993); https://doi.org/10.1117/12.156524

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