Paper
19 November 1993 Scaling-law anomaly and band-structure-enhanced optical nonlinearities in semiconductor superlattices
Milan Jaros, Mike J. Shaw
Author Affiliations +
Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162770
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy
Abstract
We show that there is a well defined class of semiconductor heterostructures (e.g., GaSb- InAs-AlSb, CdHgTe-CdTe) which do not obey the universal scaling law valid for below band gap excitations in bulk insulators and semiconductors. The magnitude, and the frequency at which the third order susceptibility changes its sign, are tunable over a range of energies spanning a significant fraction of the band gap, and reflect the separation in energy and the character of the dispersion in momentum space of higher lying minibands. The role of the microscopic (e.g., band structure) effects is also demonstrated in the range of photon energies capable of generating optical nonlinearities in the mid and far infrared, e.g., via excitations between valence minibands in p-type GaAs-AlAs quantum well structures.
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Milan Jaros and Mike J. Shaw "Scaling-law anomaly and band-structure-enhanced optical nonlinearities in semiconductor superlattices", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); https://doi.org/10.1117/12.162770
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KEYWORDS
Semiconductors

Nonlinear optics

Optical semiconductors

P-type semiconductors

Superlattices

Dielectrics

Dispersion

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