Photoluminescence of porous silicon by pulse exitation

A. V. Andrianov; Dmitri I. Kovalev; V. B. Shuman; Ilya D. Yaroshetskii

doi:10.1117/12.162796

19 November 1993 Photoluminescence of porous silicon by pulse exitation

A. V. Andrianov, Dmitri I. Kovalev, V. B. Shuman, Ilya D. Yaroshetskii

Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162796
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy

Abstract

Strong time evolution of the porous silicon photoluminescence (PL) spectrum was first found and investigated. Two radiation bands were demonstrated under pulse optical excitation.

Citation Download Citation

A. V. Andrianov, Dmitri I. Kovalev, V. B. Shuman, and Ilya D. Yaroshetskii "Photoluminescence of porous silicon by pulse exitation", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); https://doi.org/10.1117/12.162796

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available