Far-infrared photoconductivity in n-GaAs at filamentary current flow

V. G. Golubev

doi:10.1117/12.2298265

14 December 1992 Far-infrared photoconductivity in n-GaAs at filamentary current flow

V. G. Golubev

Proceedings Volume 1929, 17th International Conference on Infrared and Millimeter Waves; 192944 (1992) https://doi.org/10.1117/12.2298265
Event: 17th International Conference on Infrared and Millimeter Waves, 1992, Pasadena, CA, United States

Abstract

At low temperatures the autocatalytic process of impact ionization of shallow impurities in high purity semiconductors leads to highly nonlinear current-voltage characteristics. At a critical breakdown voltage, the impact ionization rate of impurities exceeds the capture rate of free carriers at low concentrations, yielding a rapid increase of the current for a practically constant voltage across the sample. At breakdown a strongly ionized channel is formed in the sample constituting a current filament which carries the total current [1]. Any increase of the current is then caused by lateral growth of the current filament.

Citation Download Citation

V. G. Golubev "Far-infrared photoconductivity in n-GaAs at filamentary current flow", Proc. SPIE 1929, 17th International Conference on Infrared and Millimeter Waves, 192944 (14 December 1992); https://doi.org/10.1117/12.2298265

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