Negative DUV photoresist for 16Mb-DRAM production and future generations

Will Conley; William R. Brunsvold; Richard A. Ferguson; Jeffrey D. Gelorme; Steven J. Holmes; Ronald M. Martino; Magda Petryniak; Paul A. Rabidoux; Ratnam Sooriyakumaran; John L. Sturtevant

doi:10.1117/12.154744

15 September 1993 Negative DUV photoresist for 16Mb-DRAM production and future generations

Will Conley, William R. Brunsvold, Richard A. Ferguson, Jeffrey D. Gelorme, Steven J. Holmes, Ronald M. Martino, Magda Petryniak, Paul A. Rabidoux, Ratnam Sooriyakumaran, John L. Sturtevant

Author Affiliations +

Proceedings Volume 1925, Advances in Resist Technology and Processing X; (1993) https://doi.org/10.1117/12.154744
Event: SPIE'S 1993 Symposium on Microlithography, 1993, San Jose, CA, United States

Abstract

This paper discusses a new negative tone aqueous base developable photoresist that has demonstrated excellent sub-half micron resolution with commercially available DUV (deep ultraviolet) exposure systems. This system which consists of a phenolic resin (pHOST), a glycoluril crosslinker (TMMGU), and a triflic acid generating material is currently in use for the manufacturing of 16 M b-DRAM and related CMOS logic technology. We provide supporting manufacturing data relating to our experiences with this program, along with the benefits realized by the implementation of a negative tone photoresist system.

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Will Conley, William R. Brunsvold, Richard A. Ferguson, Jeffrey D. Gelorme, Steven J. Holmes, Ronald M. Martino, Magda Petryniak, Paul A. Rabidoux, Ratnam Sooriyakumaran, and John L. Sturtevant "Negative DUV photoresist for 16Mb-DRAM production and future generations", Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); https://doi.org/10.1117/12.154744

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