Dissolution kinetics of chemically amplified resists

Toshiro Itani; Katsuyuki Itoh; Kunihiko Kasama

doi:10.1117/12.154773

15 September 1993 Dissolution kinetics of chemically amplified resists

Toshiro Itani, Katsuyuki Itoh, Kunihiko Kasama

Proceedings Volume 1925, Advances in Resist Technology and Processing X; (1993) https://doi.org/10.1117/12.154773
Event: SPIE'S 1993 Symposium on Microlithography, 1993, San Jose, CA, United States

Abstract

The dissolution rate characteristics of two typical DUV chemically amplified resists (negative resist A and positive resist B) were investigated, by comparing with an i-line novolac resist (resist C). The negative resist A here was based on crosslinking between phenolic resin and melamine derivatives, and the positive resist B was composed of tert-BOC protected phenolic resin.

Citation Download Citation

Toshiro Itani, Katsuyuki Itoh, and Kunihiko Kasama "Dissolution kinetics of chemically amplified resists", Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); https://doi.org/10.1117/12.154773

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