Characterization and simulation of acid-catalyzed DUV positive photoresist

Nicholas K. Eib; Eytan Barouch; Uwe Hollerbach; Steven A. Orszag

doi:10.1117/12.154751

15 September 1993 Characterization and simulation of acid-catalyzed DUV positive photoresist

Nicholas K. Eib, Eytan Barouch, Uwe Hollerbach, Steven A. Orszag

Proceedings Volume 1925, Advances in Resist Technology and Processing X; (1993) https://doi.org/10.1117/12.154751
Event: SPIE'S 1993 Symposium on Microlithography, 1993, San Jose, CA, United States

Abstract

An investigation of the dissolution behavior of an acid catalyzed deep ultraviolet (DUV) positive resist has been completed. The immersion develop dissolution rate as a function of dose and post exposure bake temperature was measured by Perkin Elmer Dissolution Rate Monitor (DRM) for single layer resist on a silicon substrate. A reaction-diffusion model has been built to describe the dependence of development rate on exposure dose and post exposure bake (PEB) time/temperature. A mixed diffusion model has been built to account for catalyst diffusion and quenching. Developed images have been compared with simulated image quality, line width, and process window.

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Nicholas K. Eib, Eytan Barouch, Uwe Hollerbach, and Steven A. Orszag "Characterization and simulation of acid-catalyzed DUV positive photoresist", Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); https://doi.org/10.1117/12.154751

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