Paper
15 September 1993 Acid-catalyzed single-layer resists for ArF lithography
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Abstract
A positive-tone single-layer resist for use with 193 nm radiation has been developed. The system contains a terpolymer of methyl methacrylate, methacrylic acid, and (tau) -butyl methacrylate, along with a photoacid generator. The chemically amplified deprotection of the (tau) -butyl methacrylate into methacrylic acid increases the polarity of the resist and allows selective dissolution in metal-ion-free aqueous base solutions. The resist sensitivity is less than 10 mJ/cm2, and its inherent resolution is better than 0.1 micrometers . These acrylate-based systems have potential for both lower cost and better environmental stability compared with the deep ultraviolet chemically amplified resists which use phenolic resins.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Roderick R. Kunz, Robert D. Allen, William D. Hinsberg, and Gregory M. Wallraff "Acid-catalyzed single-layer resists for ArF lithography", Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); https://doi.org/10.1117/12.154749
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Cited by 31 scholarly publications.
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KEYWORDS
Deep ultraviolet

Lithography

Absorption

Prototyping

Absorbance

Chemically amplified resists

Laser development

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